The QDs are then obtained by depositing 2.5 nm of GaAs that fills the nanoholes during a 2 min annealing process. This layer is subsequently capped with 120 nm of Al0.4Ga0.6As acting as top barrier. Finally, two pairs of Al0.2Ga0.8As/AlAs layers were grown to complete the cavity. Due to the limited number of https://malcolmx852jor3.blogoscience.com/profile