S.A. Kukushkin et al. fifty,fifty one described their coordinated substitution of atoms system for the growth of epitaxial SiC and as opposed it to far more classic vapor phase deposition approaches. The authors developed their strategy based on the conversion of the highest levels on the Si substrate surface into https://www.facebook.com/permalink.php?story_fbid=pfbid02xUArEpapo69Dr4U6qjpTMNcMtWCTM1MtC54Z5bMPZfEXne3eZoA4LpjFRnptZ7DLl&id=61562415773754&__cft__[0]=AZU43H4WB62fYXxtf3cVK3Yk9f6mzUpGkJGsDLBIsCTC-yZI9VmqJ6cPcy1lWuwjre9K6RTl0ZgCxjnYufbf_t0xWO7zYe6_LSAqJzB6h6kqoFETM1FG1d8txL0cZmN8sphUu9RLnbgdewDSSUxqzuHrJq-Xf2yDe3Zh3Ok-vqJlTQ&__tn__=%2CO%2CP-R